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크롬, 데스크탑에서 최적화됨
Wafer extreme thinning
본 사이트는 데스크탑에 최적화되어있습니다!!
⊙ Wafer ultra thinning
⊙ Wafer damage relief
⊙ Thin wafer structuring

12" Ultra-Thinned wafer THK : 15um

8" Ultra-Thinned wafer thickness : 10um
SkpChem Research & Developement

Flexibility of Ultra thinned patterned wafer


Transmission of thickness : 10um

NAND flash memory Transmission of 6 ㎛t
Enlarged image
Wafer Ultra thinning equipment


Single wafer thinning equipment


Barrel wafer thinning equipment


Dip wafer thinning equipment

#2,000 grit back side ground wafer

bare wafer Vs thinned wafer


textured surface of back side

Mirror surface of back side

Various surface roughness
Bendable chips
After etching ▷ No Warpage

Flexible wafer : 8um

Before thinning: 50㎛t

After thinning:6 ㎛t

Extreme thinned chip Thickness : 6 ㎛t


Bendable chip : 5x5mm , 6㎛t
Light transmission
Mechanical (SSD) damage relief


change to smooth edge


mirror surface and wheel mark removed by chemical polishing




improved die strength & uniformity
Micro Sensor
▷Thin-film device (Micro-Sensor) Manufacturing Technology
This work presents a novel method entitled “device transfer by backside etching (DTBE)” for transferring thin-film devices from Si wafers to a glass or plastic substrate. First, high performance poly-Si thin-film transistors (TFTs) were fabricated on a Si wafer and then adhered to UV tape substrates. The remaining Si was removed delicately using wafer backside grinding and wet chemical etching.

Micro sensor on the UV tape


Line width : 20~40um / thickness 20um , method : dip etching